| PART |
Description |
Maker |
| PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| AGR19180EF |
180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PD60-0012-06S PD60-0003-04S |
1930 MHz - 1990 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS
1930 MHz - 1990 MHz RF/MICROWAVE COMBINER, 0.27 dB INSERTION LOSS
|
M/A-COM Technology Solutions, Inc.
|
| FR12-0004 FR11-0004 |
3- Port DROP - IN CIRCULATOR / ISOLATOR 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| PH1920-45 |
Wireless Bipolar Power Transistor 45W, 1930-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| 1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
LEM
|
| PTF191601E PTF191601F |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
|
Infineon Technologies A...
|
| PTFA192401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| PFM19030 PFM19030SM PFM19030F |
1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19 |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
